美芯商城为您提供Samsung Electro-Mechanics生产的表面贴装电感产品, 表面贴装电感
Samsung Electro-Mechanics生产的表面贴装电感产品, 表面贴装电感共有 316 产品
| 型号 | 生产厂家 | 产品描述 | |
| CIG10F2R2MNC | Samsung Electro-Mechanics | Ind Power Chip Shielded Multi-Layer 2.2uH 20% 1MHz Ferrite 500mA 0603 Paper T/R |  |
| CIL10Y5R6KNC | Samsung Electro-Mechanics | Ind Chip Shielded Multi-Layer 5.6uH 10% 4MHz 35Q-Factor Ferrite 5mA 0603 Paper T/R | |
| CIG10FR47MNC | Samsung Electro-Mechanics | Ind Power Chip Shielded Multi-Layer 470nH 20% 1MHz Ferrite 800mA 0603 Paper T/R | |
| CIL10Y6R8KNC | Samsung Electro-Mechanics | Ind Chip Shielded Multi-Layer 6.8uH 10% 4MHz 35Q-Factor Ferrite 5mA 0603 Paper T/R | |
| CIG10W4R7MNC | Samsung Electro-Mechanics | Ind Power Chip Shielded Multi-Layer 4.7uH 20% 1MHz Ferrite 620mA 0603 Paper T/R | |
| CIG10W1R0MNC | Samsung Electro-Mechanics | Ind Power Chip Shielded Multi-Layer 1uH 20% 1MHz Ferrite 950mA 0603 Paper T/R | |
| CIL21J1R0KNE | Samsung Electro-Mechanics | Ind Chip Shielded Multi-Layer 1uH 10% 10MHz 45Q-Factor Ferrite 50mA 0805 Embossed T/R | |
| CIG10WR27MNC | Samsung Electro-Mechanics | POWER INDUCTOR,0603,0.27UH,20%,1.30A | |
| CIL21J1R8KNE | Samsung Electro-Mechanics | Ind Chip Shielded Multi-Layer 1.8uH 10% 10MHz 45Q-Factor Ferrite 50mA 0805 Embossed T/R | |
| CIL21J2R2KNE | Samsung Electro-Mechanics | Ind Chip Shielded Multi-Layer 2.2uH 10% 10MHz 45Q-Factor Ferrite 30mA 0805 Embossed T/R | |
| CIG10W1R5MNC | Samsung Electro-Mechanics | Ind Power Chip Shielded Multi-Layer 1.5uH 20% 1MHz Ferrite 800mA 0603 Paper T/R | |
| CIL21J1R2KNE | Samsung Electro-Mechanics | Ind Chip Shielded Multi-Layer 1.2uH 10% 10MHz 45Q-Factor Ferrite 50mA 0805 Embossed T/R | |
| CIG10WR47MNC | Samsung Electro-Mechanics | Ind Power Chip Shielded Multi-Layer 470nH 20% 1MHz Ferrite 1.1A 0603 Paper T/R | |
| CIL21J2R7KNE | Samsung Electro-Mechanics | Ind Chip Shielded Multi-Layer 2.7uH 10% 10MHz 45Q-Factor Ferrite 30mA 0805 Embossed T/R | |
| CIL21J3R3KNE | Samsung Electro-Mechanics | Ind Chip Shielded Multi-Layer 3.3uH 10% 10MHz 45Q-Factor Ferrite 30mA 0805 Embossed T/R | |
| CIG21F1R0MNC | Samsung Electro-Mechanics | Ind Power Chip Shielded Multi-Layer 1uH 20% 1MHz Ferrite 800mA 0805 Paper T/R | |
| CIL21J3R9KNE | Samsung Electro-Mechanics | Ind Chip Shielded Multi-Layer 3.9uH 10% 10MHz 45Q-Factor Ferrite 30mA 0805 Embossed T/R | |
| CIL21J1R5KNE | Samsung Electro-Mechanics | Ind Chip Shielded Multi-Layer 1.5uH 10% 10MHz 45Q-Factor Ferrite 50mA 0805 Embossed T/R | |
| CIG10W2R2MNC | Samsung Electro-Mechanics | Ind Power Chip Shielded Multi-Layer 2.2uH 20% 1MHz Ferrite 750mA 0603 Paper T/R | |
| CIG21F1R5MNC | Samsung Electro-Mechanics | Ind Power Chip Shielded Multi-Layer 1.5uH 20% 1MHz Ferrite 700mA 0805 Paper T/R | |
| CIG10W3R3MNC | Samsung Electro-Mechanics | Ind Power Chip Shielded Multi-Layer 3.3uH 20% 1MHz Ferrite 700mA 0603 Paper T/R | |
| CIL21J4R7KNE | Samsung Electro-Mechanics | Ind Chip Shielded Multi-Layer 4.7uH 10% 10MHz 45Q-Factor Ferrite 30mA 0805 Embossed T/R | |
| CIG21F2R2MNC | Samsung Electro-Mechanics | Ind Power Chip Shielded Multi-Layer 2.2uH 20% 1MHz Ferrite 600mA 0805 Paper T/R | |
| CIG21FR47MNC | Samsung Electro-Mechanics | Ind Power Chip Shielded Multi-Layer 470nH 20% 1MHz Ferrite 1.1A 0805 Paper T/R | |
| CIL21N47NKNE | Samsung Electro-Mechanics | Ind Chip Shielded Multi-Layer 47nH 10% 50MHz 15Q-Factor Ferrite 300mA 0805 Embossed T/R | |
| CIG21L1R0MNE | Samsung Electro-Mechanics | Ind Power Chip Shielded Multi-Layer 1uH 20% 1MHz Ferrite 1.15A 0805 Embossed T/R | |
| CIL21N47NMNE | Samsung Electro-Mechanics | Ind Chip Shielded Multi-Layer 47nH 20% 50MHz 15Q-Factor Ferrite 300mA 0805 Embossed T/R | |
| CIG21L1R5MNE | Samsung Electro-Mechanics | Ind Power Chip Shielded Multi-Layer 1.5uH 20% 1MHz Ferrite 1.05A 0805 Embossed T/R | |
| CIL21N68NMNE | Samsung Electro-Mechanics | Ind Chip Shielded Multi-Layer 68nH 20% 50MHz 15Q-Factor Ferrite 300mA 0805 Embossed T/R | |
| CIG21L2R2MNE | Samsung Electro-Mechanics | Ind Power Chip Shielded Multi-Layer 2.2uH 20% 1MHz Ferrite 950mA 0805 Embossed T/R | |
| CIL21NR10KNE | Samsung Electro-Mechanics | Ind Chip Shielded Multi-Layer 100nH 10% 25MHz 20Q-Factor Ferrite 250mA 0805 Embossed T/R | |
| CIG21L3R3MNE | Samsung Electro-Mechanics | Ind Power Chip Shielded Multi-Layer 3.3uH 20% 1MHz Ferrite 800mA 0805 Embossed T/R | |
| CIG21L4R7MNE | Samsung Electro-Mechanics | Ind Power Chip Shielded Multi-Layer 4.7uH 20% 1MHz Ferrite 750mA 0805 Embossed T/R | |
| CIG21LR47MNE | Samsung Electro-Mechanics | Ind Power Chip Shielded Multi-Layer 470nH 20% 1MHz Ferrite 1.3A 0805 Embossed T/R | |
| CIL21NR22KNE | Samsung Electro-Mechanics | Ind Chip Shielded Multi-Layer 220nH 10% 25MHz 20Q-Factor Ferrite 250mA 0805 Embossed T/R | |
| SMSCIH10T47NJNC | Samsung Electro-Mechanics | Ind High Frequency Chip Multi-Layer 47nH 5% 100MHz 12Q-Factor 300mA 0603 Paper T/R | |
| CIL21NR27JNE | Samsung Electro-Mechanics | CHIP INDUCTOR,2012,0.27UH,5%,0.25A | |
| CIG22B1R0MNE | Samsung Electro-Mechanics | Ind Power Chip Shielded Multi-Layer 1uH 20% 1MHz Ferrite 1.2A 1008 Embossed T/R | |
| CIL21NR27KNE | Samsung Electro-Mechanics | Ind Chip Shielded Multi-Layer 270nH 10% 25MHz 20Q-Factor Ferrite 250mA 0805 Embossed T/R | |
| CIG22B2R2MNE | Samsung Electro-Mechanics | Ind Power Chip Shielded Multi-Layer 2.2uH 20% 1MHz Ferrite 1.1A 1008 Embossed T/R | |
| CIL21NR47KNE | Samsung Electro-Mechanics | Ind Chip Shielded Multi-Layer 470nH 10% 25MHz 25Q-Factor Ferrite 200mA 0805 Embossed T/R | |
| CIG22B3R3MNE | Samsung Electro-Mechanics | Ind Power Chip Shielded Multi-Layer 3.3uH 20% 1MHz Ferrite 1.05A 1008 Embossed T/R | |
| CIL21NR27MNE | Samsung Electro-Mechanics | Ind Chip Shielded Multi-Layer 270nH 20% 25MHz 20Q-Factor Ferrite 250mA 0805 Embossed T/R | |
| CIG22H1R0MNE | Samsung Electro-Mechanics | Ind Power Chip Shielded Multi-Layer 1uH 20% 1MHz Ferrite 2A 1008 Embossed T/R | |
| CIG22H1R2MNE | Samsung Electro-Mechanics | POWER INDUCTOR,1008,1.2UH,20%,1.90A | |
| CIL21NR56KNE | Samsung Electro-Mechanics | Ind Chip Shielded Multi-Layer 560nH 10% 25MHz 25Q-Factor Ferrite 150mA 0805 Embossed T/R | |
| CIG22B4R7MNE | Samsung Electro-Mechanics | Ind Power Chip Shielded Multi-Layer 4.7uH 20% 1MHz Ferrite 1A 1008 Embossed T/R | |
| CIL21NR39KNE | Samsung Electro-Mechanics | Ind Chip Shielded Multi-Layer 390nH 10% 25MHz 25Q-Factor Ferrite 200mA 0805 Embossed T/R | |
| CIG22H1R5MNE | Samsung Electro-Mechanics | POWER INDUCTOR,1008,1.5UH,20%,1.60A | |
| CIL21NR82KNE | Samsung Electro-Mechanics | Ind Chip Shielded Multi-Layer 820nH 10% 25MHz 25Q-Factor Ferrite 150mA 0805 Embossed T/R | |
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