图片仅供参考，请以实物为准
PHS2N5551412
满参数 |
数值 |
|---|---|
| 规格书 |
 数据手册下载 |
| Category | GP BJT |
| Minimum DC Current Gain | 80@1mA@5V|80@10mA@5V|30@50mA@5V |
| Maximum Collector Base Voltage | 180 V |
| Package | 3SPT |
| Mounting | Through Hole |
| Maximum Collector Emitter Saturation Voltage | 0.15@1mA@10mA|0.2@5mA@50mA V |
| Maximum Collector Emitter Voltage | 160 V |
| Maximum Power Dissipation | 630 mW |
| Maximum Operating Frequency | 300 MHz |
| Operating Temperature | -65 to 150 °C |
| Maximum DC Collector Current | 0.3 A |
| Type | NPN |
| Pin Count | 3 |
| Manufacturer | NXP Semiconductors |
