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SI4909DY-T1-GE3/BKN
满1000元免运费及包装费
参数 |
数值 |
|---|---|
| 规格书 |
 数据手册下载 |
| Package | 8SOIC N |
| Channel Type | P |
| Channel Mode | Enhancement |
| Maximum Drain Source Voltage | 40 V |
| Maximum Continuous Drain Current | 6.4 A |
| RDS-on | 27@10V mOhm |
| Maximum Gate Source Voltage | ±20 V |
| Typical Turn-On Delay Time | 10|42 ns |
| Typical Rise Time | 9|40 ns |
| Typical Turn-Off Delay Time | 50|40 ns |
| Typical Fall Time | 13|18 ns |
| Operating Temperature | -55 to 150 °C |
| Mounting | Surface Mount |
| Category | MOSFET |
| Manufacturer | Vishay / Siliconix |
